STH140N6F7-6

R 1.00

MOSFET N-channel 60 V, 0.0028 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-6 package

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MOSFET N-channel 60 V, 0.0028 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-6 package

Products specifications

Channel Mode	Enhancement
Configuration	Single
Id - Continuous Drain Current	80 A
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	2 V
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	55 nC
Pd - Power Dissipation	158 W
Maximum Operating Temperature	+ 175 C
Tradename	STripFET
Technology	Si
Vds - Drain-Source Breakdown Voltage	60 V
Rds On - Drain-Source Resistance	2.8 mOhms

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Products specifications

Channel Mode	Enhancement
Configuration	Single
Id - Continuous Drain Current	80 A
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	2 V
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	55 nC
Pd - Power Dissipation	158 W
Maximum Operating Temperature	+ 175 C
Tradename	STripFET
Technology	Si
Vds - Drain-Source Breakdown Voltage	60 V
Rds On - Drain-Source Resistance	2.8 mOhms