STH140N6F7-2

R 1.00

MOSFET N-channel 60 V, 0.0028 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package

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MOSFET N-channel 60 V, 0.0028 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package

Products specifications

Transistor Polarity	N-Channel
Number of Channels	1 Channel
Technology	Si
Qg - Gate Charge	55 nC
Id - Continuous Drain Current	80 A
Channel Mode	Enhancement
Configuration	Single
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	158 W
Rds On - Drain-Source Resistance	3.2 mOhms
Packaging	Cut Tape, MouseReel, Reel
Tradename	STripFET
Vds - Drain-Source Breakdown Voltage	60 V
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	20 V

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Products specifications

Transistor Polarity	N-Channel
Number of Channels	1 Channel
Technology	Si
Qg - Gate Charge	55 nC
Id - Continuous Drain Current	80 A
Channel Mode	Enhancement
Configuration	Single
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	158 W
Rds On - Drain-Source Resistance	3.2 mOhms
Packaging	Cut Tape, MouseReel, Reel
Tradename	STripFET
Vds - Drain-Source Breakdown Voltage	60 V
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	20 V