STH130N8F7-2

R 1.00

MOSFET N-channel 80 V, 4.2 mOhm typ., 110 A STripFET F7 Power MOSFET in an H2PAK-2 package

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MOSFET N-channel 80 V, 4.2 mOhm typ., 110 A STripFET F7 Power MOSFET in an H2PAK-2 package

Products specifications

Pd - Power Dissipation	205 W
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V
Vds - Drain-Source Breakdown Voltage	80 V
Id - Continuous Drain Current	110 A
Tradename	STripFET
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	60 nC
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	4.2 mOhms
Technology	Si
Number of Channels	1 Channel
Maximum Operating Temperature	+ 175 C
Configuration	Single
Channel Mode	Enhancement

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Products specifications

Pd - Power Dissipation	205 W
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V
Vds - Drain-Source Breakdown Voltage	80 V
Id - Continuous Drain Current	110 A
Tradename	STripFET
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	60 nC
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	4.2 mOhms
Technology	Si
Number of Channels	1 Channel
Maximum Operating Temperature	+ 175 C
Configuration	Single
Channel Mode	Enhancement