STH12N120K5-2

R 1.00

MOSFET N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in H2PAK-2 package

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MOSFET N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in H2PAK-2 package

Products specifications

Channel Mode	Enhancement
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	620 mOhms
Transistor Polarity	N-Channel
Pd - Power Dissipation	250 W
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	44.2 nC
Vds - Drain-Source Breakdown Voltage	1.2 kV
Maximum Operating Temperature	+ 150 C
Technology	Si
Minimum Operating Temperature	- 55 C
Configuration	Single
Number of Channels	1 Channel
Id - Continuous Drain Current	12 A
Vgs th - Gate-Source Threshold Voltage	3 V

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Products specifications

Channel Mode	Enhancement
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	620 mOhms
Transistor Polarity	N-Channel
Pd - Power Dissipation	250 W
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	44.2 nC
Vds - Drain-Source Breakdown Voltage	1.2 kV
Maximum Operating Temperature	+ 150 C
Technology	Si
Minimum Operating Temperature	- 55 C
Configuration	Single
Number of Channels	1 Channel
Id - Continuous Drain Current	12 A
Vgs th - Gate-Source Threshold Voltage	3 V