IGBTs PTD IGBT & IPM
Lead Time: 0 Days
Products specifications
Packaging | Tube |
Collector- Emitter Voltage VCEO Max | 600 V |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Maximum Operating Temperature | + 175 C |
Collector-Emitter Saturation Voltage | 1.85 V |
Pd - Power Dissipation | 469 W |
Mounting Style | Through Hole |
Maximum Gate Emitter Voltage | 20 V |
Technology | Si |
Series | STGWT80V60F |
Continuous Collector Current at 25 C | 120 A |