IGBT Transistors 600V 40A High Speed Trench Gate IGBT
Products specifications
Continuous Collector Current at 25 C | 80 A |
Minimum Operating Temperature | - 55 C |
Collector- Emitter Voltage VCEO Max | 600 V |
Pd - Power Dissipation | 283 W |
Configuration | Single |
Technology | Si |
Maximum Gate Emitter Voltage | 20 V |
Packaging | Tube |
Maximum Operating Temperature | + 175 C |
Series | STGWT40V60DLF |
Mounting Style | Through Hole |
Collector-Emitter Saturation Voltage | 2.35 V |