STGWT40V60DF

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IGBT Transistors 600V 40A High Speed Trench Gate IGBT

SKU: STGWT40V60DF

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IGBT Transistors 600V 40A High Speed Trench Gate IGBT

Products specifications

Pd - Power Dissipation	283 W
Maximum Operating Temperature	+ 175 C
Series	STGWT40V60DF
Configuration	Single
Collector-Emitter Saturation Voltage	2.35 V
Minimum Operating Temperature	- 55 C
Collector- Emitter Voltage VCEO Max	600 V
Maximum Gate Emitter Voltage	20 V
Continuous Collector Current at 25 C	80 A
Mounting Style	Through Hole
Technology	Si
Packaging	Tube

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Products specifications

Pd - Power Dissipation	283 W
Maximum Operating Temperature	+ 175 C
Series	STGWT40V60DF
Configuration	Single
Collector-Emitter Saturation Voltage	2.35 V
Minimum Operating Temperature	- 55 C
Collector- Emitter Voltage VCEO Max	600 V
Maximum Gate Emitter Voltage	20 V
Continuous Collector Current at 25 C	80 A
Mounting Style	Through Hole
Technology	Si
Packaging	Tube