IGBT Transistors PTD IGBT & IPM
Products specifications
Mounting Style | Through Hole |
Packaging | Tube |
Maximum Operating Temperature | + 175 C |
Continuous Collector Current at 25 C | 30 A |
Collector- Emitter Voltage VCEO Max | 600 V |
Maximum Gate Emitter Voltage | 20 V |
Minimum Operating Temperature | - 55 C |
Pd - Power Dissipation | 115 W |
Collector-Emitter Saturation Voltage | 1.6 V |
Configuration | Single |
Series | STGWT15H60F |