IGBTs Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
Lead Time: 105 Days
Products specifications
Configuration | Single |
Packaging | Tube |
Collector-Emitter Saturation Voltage | 1.6 V |
Maximum Operating Temperature | + 175 C |
Minimum Operating Temperature | - 55 C |
Technology | Si |
Series | STGWA80H65FB |
Maximum Gate Emitter Voltage | 20 V |
Collector- Emitter Voltage VCEO Max | 650 V |
Pd - Power Dissipation | 469 W |
Mounting Style | Through Hole |
Continuous Collector Current at 25 C | 120 A |