IGBT Transistors Trench gate field-stop 650 V, 40 A high speed HB series IGBT
Products specifications
Technology | Si |
Minimum Operating Temperature | - 55 C |
Collector-Emitter Saturation Voltage | 1.6 V |
Pd - Power Dissipation | 283 W |
Mounting Style | Through Hole |
Collector- Emitter Voltage VCEO Max | 650 V |
Continuous Collector Current at 25 C | 80 A |
Series | STGWA40H65FB |
Configuration | Single |
Maximum Operating Temperature | + 175 C |