IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 40 A high speed
Products specifications
Maximum Gate Emitter Voltage | 2 V |
Mounting Style | Through Hole |
Continuous Collector Current at 25 C | - |
Maximum Operating Temperature | + 175 C |
Collector-Emitter Saturation Voltage | 1.6 V |
Series | STGWA40H60DLFB |
Pd - Power Dissipation | 283 W |
Technology | Si |
Collector- Emitter Voltage VCEO Max | 600 V |
Configuration | Single |