STGWA30H65DFB

IGBT Transistors Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT

SKU: STGWA30H65DFB

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R 79.71

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R 63.55

R 52.78

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IGBT Transistors Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT

Products specifications

Continuous Collector Current at 25 C	60 A
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Technology	Si
Maximum Operating Temperature	+ 175 C
Collector-Emitter Saturation Voltage	1.55 V
Series	STGWA30H65DFB
Collector- Emitter Voltage VCEO Max	650 V
Configuration	Single
Pd - Power Dissipation	260 W

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Products specifications

Continuous Collector Current at 25 C	60 A
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Technology	Si
Maximum Operating Temperature	+ 175 C
Collector-Emitter Saturation Voltage	1.55 V
Series	STGWA30H65DFB
Collector- Emitter Voltage VCEO Max	650 V
Configuration	Single
Pd - Power Dissipation	260 W