IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Products specifications
Maximum Gate Emitter Voltage | 20 V |
Pd - Power Dissipation | 375 W |
Series | STGWA25H120DF2 |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C |
Continuous Collector Current at 25 C | 50 A |
Collector-Emitter Saturation Voltage | 2.5 V |
Mounting Style | Through Hole |
Collector- Emitter Voltage VCEO Max | 1200 V |
Technology | Si |