IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
Products specifications
Mounting Style | Through Hole |
Collector-Emitter Saturation Voltage | 2.5 V |
Technology | Si |
Series | STGWA15H120F2 |
Collector- Emitter Voltage VCEO Max | 1200 V |
Configuration | Single |
Maximum Operating Temperature | + 175 C |
Maximum Gate Emitter Voltage | 20 V |
Pd - Power Dissipation | 259 W |
Continuous Collector Current at 25 C | 30 A |
Minimum Operating Temperature | - 55 C |