STGW8M120DF3

IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
Lead Time: 105 Days

SKU: STGW8M120DF3

Availability: 859 in stock

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R 105.29

R 71.36

R 53.32

R 51.16

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IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
Lead Time: 105 Days

Products specifications

Packaging	Tube
Minimum Operating Temperature	- 55 C
Maximum Gate Emitter Voltage	20 V
Mounting Style	Through Hole
Collector- Emitter Voltage VCEO Max	1200 V
Configuration	Single
Continuous Collector Current at 25 C	16 A
Pd - Power Dissipation	167 W
Maximum Operating Temperature	+ 175 C
Collector-Emitter Saturation Voltage	1.85 V
Series	STGW8M120DF3

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Products specifications

Packaging	Tube
Minimum Operating Temperature	- 55 C
Maximum Gate Emitter Voltage	20 V
Mounting Style	Through Hole
Collector- Emitter Voltage VCEO Max	1200 V
Configuration	Single
Continuous Collector Current at 25 C	16 A
Pd - Power Dissipation	167 W
Maximum Operating Temperature	+ 175 C
Collector-Emitter Saturation Voltage	1.85 V
Series	STGW8M120DF3