STGW80H65FB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

SKU: STGW80H65FB

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Quantity

600+

Price

R 112.83

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IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

Products specifications

Collector-Emitter Saturation Voltage	1.6 V
Technology	Si
Collector- Emitter Voltage VCEO Max	650 V
Mounting Style	Through Hole
Series	STGW80H65FB
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	469 W
Configuration	Single
Packaging	Tube
Maximum Operating Temperature	+ 175 C
Maximum Gate Emitter Voltage	20 V
Continuous Collector Current at 25 C	120 A

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Products specifications

Collector-Emitter Saturation Voltage	1.6 V
Technology	Si
Collector- Emitter Voltage VCEO Max	650 V
Mounting Style	Through Hole
Series	STGW80H65FB
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	469 W
Configuration	Single
Packaging	Tube
Maximum Operating Temperature	+ 175 C
Maximum Gate Emitter Voltage	20 V
Continuous Collector Current at 25 C	120 A