IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
Products specifications
Continuous Collector Current at 25 C | 120 A |
Collector-Emitter Saturation Voltage | 1.9 V |
Series | STGW60H65DRF |
Technology | Si |
Pd - Power Dissipation | 360 W |
Maximum Gate Emitter Voltage | 20 V |
Collector- Emitter Voltage VCEO Max | 650 V |
Packaging | Tube |