IGBTs Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
Products specifications
Series | STGW60H65DFB-4 |
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Pd - Power Dissipation | 283 W |
Configuration | Single |
Collector-Emitter Saturation Voltage | 1.6 V |
Maximum Operating Temperature | + 175 C |
Technology | Si |
Collector- Emitter Voltage VCEO Max | 650 V |
Continuous Collector Current at 25 C | 80 A |