IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Lead Time: 105 Days
Products specifications
Maximum Operating Temperature | + 175 C |
Configuration | Single |
Mounting Style | Through Hole |
Maximum Gate Emitter Voltage | 20 V |
Collector- Emitter Voltage VCEO Max | 1200 V |
Pd - Power Dissipation | 468 W |
Continuous Collector Current at 25 C | 80 A |
Minimum Operating Temperature | - 55 C |
Series | STGW40H120F2 |
Packaging | Tube |
Technology | Si |
Collector-Emitter Saturation Voltage | 2.1 V |