STGW25M120DF3

IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
Lead Time: 105 Days

SKU: STGW25M120DF3

Availability: 575 in stock

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R 151.34

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R 94.52

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R 74.86

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IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
Lead Time: 105 Days

Products specifications

Packaging	Tube
Collector- Emitter Voltage VCEO Max	1200 V
Technology	Si
Configuration	Single
Collector-Emitter Saturation Voltage	1.85 V
Maximum Operating Temperature	+ 175 C
Minimum Operating Temperature	- 55 C
Series	STGW25M120DF3
Maximum Gate Emitter Voltage	20 V
Mounting Style	Through Hole
Pd - Power Dissipation	326 W
Continuous Collector Current at 25 C	50 A

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Products specifications

Packaging	Tube
Collector- Emitter Voltage VCEO Max	1200 V
Technology	Si
Configuration	Single
Collector-Emitter Saturation Voltage	1.85 V
Maximum Operating Temperature	+ 175 C
Minimum Operating Temperature	- 55 C
Series	STGW25M120DF3
Maximum Gate Emitter Voltage	20 V
Mounting Style	Through Hole
Pd - Power Dissipation	326 W
Continuous Collector Current at 25 C	50 A