IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Lead Time: 105 Days
Products specifications
Mounting Style | Through Hole |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C |
Maximum Gate Emitter Voltage | 20 V |
Collector-Emitter Saturation Voltage | 2.1 V |
Series | STGW25H120F2 |
Packaging | Tube |
Collector- Emitter Voltage VCEO Max | 1200 V |
Technology | Si |
Continuous Collector Current at 25 C | 50 A |
Pd - Power Dissipation | 375 W |