STGW25H120DF2

IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Lead Time: 105 Days

SKU: STGW25H120DF2

Availability: 1127 in stock

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IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Lead Time: 105 Days

Products specifications

Pd - Power Dissipation	375 W
Maximum Gate Emitter Voltage	20 V
Collector- Emitter Voltage VCEO Max	1200 V
Continuous Collector Current at 25 C	50 A
Collector-Emitter Saturation Voltage	2.1 V
Packaging	Tube
Technology	Si
Configuration	Single
Mounting Style	Through Hole
Maximum Operating Temperature	+ 175 C
Series	STGW25H120DF2
Minimum Operating Temperature	- 55 C

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Products specifications

Pd - Power Dissipation	375 W
Maximum Gate Emitter Voltage	20 V
Collector- Emitter Voltage VCEO Max	1200 V
Continuous Collector Current at 25 C	50 A
Collector-Emitter Saturation Voltage	2.1 V
Packaging	Tube
Technology	Si
Configuration	Single
Mounting Style	Through Hole
Maximum Operating Temperature	+ 175 C
Series	STGW25H120DF2
Minimum Operating Temperature	- 55 C