IGBTs Trench gate field-stop 650 V, 20 A high speed HB series IGBT
Lead Time: 0 Days
Products specifications
Pd - Power Dissipation | 168 W |
Mounting Style | Through Hole |
Collector-Emitter Saturation Voltage | 1.55 V |
Series | STGW20H65FB |
Technology | Si |
Configuration | Single |
Collector- Emitter Voltage VCEO Max | 650 V |
Maximum Operating Temperature | + 175 C |
Packaging | Tube |
Maximum Gate Emitter Voltage | 20 V |
Continuous Collector Current at 25 C | 40 A |
Minimum Operating Temperature | - 55 C |