IGBTs Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
Lead Time: 105 Days
Products specifications
Collector- Emitter Voltage VCEO Max | 1200 V |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Pd - Power Dissipation | 259 W |
Maximum Gate Emitter Voltage | 20 V |
Maximum Operating Temperature | + 175 C |
Continuous Collector Current at 25 C | 30 A |
Packaging | Tube |
Collector-Emitter Saturation Voltage | 2.1 V |
Series | STGW15H120DF2 |
Mounting Style | Through Hole |