STGW10M65DF2

IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A low loss
Lead Time: 105 Days

SKU: STGW10M65DF2

Availability: 1200 in stock

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IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A low loss
Lead Time: 105 Days

Products specifications

Pd - Power Dissipation	115 W
Mounting Style	Through Hole
Collector- Emitter Voltage VCEO Max	650 V
Collector-Emitter Saturation Voltage	1.55 V
Technology	Si
Series	STGW10M65DF2
Continuous Collector Current at 25 C	20 A
Maximum Operating Temperature	+ 175 C
Minimum Operating Temperature	- 55 C
Configuration	Single

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Products specifications

Pd - Power Dissipation	115 W
Mounting Style	Through Hole
Collector- Emitter Voltage VCEO Max	650 V
Collector-Emitter Saturation Voltage	1.55 V
Technology	Si
Series	STGW10M65DF2
Continuous Collector Current at 25 C	20 A
Maximum Operating Temperature	+ 175 C
Minimum Operating Temperature	- 55 C
Configuration	Single