STGP8M120DF3

IGBT Transistors Trench gate field-stop, 1200 V, 8 A low loss M series IGBT

SKU: STGP8M120DF3

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R 93.71

R 89.67

R 82.94

R 82.13

R 78.09

R 77.82

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IGBT Transistors Trench gate field-stop, 1200 V, 8 A low loss M series IGBT

Products specifications

Series	STGP8M120DF3
Configuration	Single
Maximum Gate Emitter Voltage	20 V
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	167 W
Collector-Emitter Saturation Voltage	1.85 V
Maximum Operating Temperature	+ 175 C
Continuous Collector Current at 25 C	16 A
Collector- Emitter Voltage VCEO Max	1.2 kV
Mounting Style	Through Hole

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Products specifications

Series	STGP8M120DF3
Configuration	Single
Maximum Gate Emitter Voltage	20 V
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	167 W
Collector-Emitter Saturation Voltage	1.85 V
Maximum Operating Temperature	+ 175 C
Continuous Collector Current at 25 C	16 A
Collector- Emitter Voltage VCEO Max	1.2 kV
Mounting Style	Through Hole