STGP7H60DF

IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 7 A high speed

SKU: STGP7H60DF

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Quantity

2000+

Price

R 14.27

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IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 7 A high speed

Products specifications

Configuration	Single
Maximum Gate Emitter Voltage	20 V
Technology	Si
Packaging	Tube
Minimum Operating Temperature	- 55 C
Collector-Emitter Saturation Voltage	1.95 V
Collector- Emitter Voltage VCEO Max	600 V
Maximum Operating Temperature	+ 175 C
Continuous Collector Current at 25 C	14 A
Mounting Style	Through Hole
Series	STGP7H60DF
Pd - Power Dissipation	88 W

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Products specifications

Configuration	Single
Maximum Gate Emitter Voltage	20 V
Technology	Si
Packaging	Tube
Minimum Operating Temperature	- 55 C
Collector-Emitter Saturation Voltage	1.95 V
Collector- Emitter Voltage VCEO Max	600 V
Maximum Operating Temperature	+ 175 C
Continuous Collector Current at 25 C	14 A
Mounting Style	Through Hole
Series	STGP7H60DF
Pd - Power Dissipation	88 W