IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low loss
Lead Time: 105 Days
Products specifications
Collector- Emitter Voltage VCEO Max | 650 V |
Mounting Style | Through Hole |
Technology | Si |
Series | STGP6M65DF2 |
Configuration | Single |
Continuous Collector Current at 25 C | 12 A |
Pd - Power Dissipation | 88 W |
Maximum Operating Temperature | + 175 C |
Minimum Operating Temperature | - 55 C |
Collector-Emitter Saturation Voltage | 1.55 V |