STGP30V60DF

IGBT Transistors 600V 30A High Speed Trench Gate IGBT
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SKU: STGP30V60DF

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IGBT Transistors 600V 30A High Speed Trench Gate IGBT
Lead Time: 0 Days

Products specifications

Pd - Power Dissipation	258 W
Configuration	Single
Collector-Emitter Saturation Voltage	2.35 V
Maximum Gate Emitter Voltage	20 V
Maximum Operating Temperature	+ 175 C
Packaging	Tube
Mounting Style	Through Hole
Series	STGP30V60DF
Technology	Si
Minimum Operating Temperature	- 55 C
Continuous Collector Current at 25 C	60 A
Collector- Emitter Voltage VCEO Max	600 V

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Products specifications

Pd - Power Dissipation	258 W
Configuration	Single
Collector-Emitter Saturation Voltage	2.35 V
Maximum Gate Emitter Voltage	20 V
Maximum Operating Temperature	+ 175 C
Packaging	Tube
Mounting Style	Through Hole
Series	STGP30V60DF
Technology	Si
Minimum Operating Temperature	- 55 C
Continuous Collector Current at 25 C	60 A
Collector- Emitter Voltage VCEO Max	600 V