IGBT Transistors Trench gate field-stop, 1200 V, 15 A, low-loss M series IGBT
Products specifications
Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 259 W |
Continuous Collector Current at 25 C | 30 A |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Series | STGP15M120F3 |
Maximum Gate Emitter Voltage | 20 V |
Collector-Emitter Saturation Voltage | 1.85 V |
Configuration | Single |