IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A low loss
Products specifications
Maximum Operating Temperature | + 175 C |
Minimum Operating Temperature | - 55 C |
Pd - Power Dissipation | 30 W |
Collector- Emitter Voltage VCEO Max | 650 V |
Continuous Collector Current at 25 C | 20 A |
Configuration | Single |
Collector-Emitter Saturation Voltage | 1.8 V |
Mounting Style | Through Hole |
Series | STGF10M65DF2 |