IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
Products specifications
Collector-Emitter Saturation Voltage | 1.55 V |
Configuration | Single |
Technology | Si |
Maximum Operating Temperature | + 175 C |
Minimum Operating Temperature | - 55 C |
Pd - Power Dissipation | 260 W |
Series | STGB30H65FB |
Collector- Emitter Voltage VCEO Max | 650 V |
Continuous Collector Current at 25 C | 60 A |