STFW40N60M2

R 1.00

MOSFET N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-3PF package

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MOSFET N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-3PF package

Products specifications

Pd - Power Dissipation	63 W
Vgs th - Gate-Source Threshold Voltage	2 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Technology	Si
Vgs - Gate-Source Voltage	25 V
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	78 mOhms
Qg - Gate Charge	57 nC
Channel Mode	Enhancement
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	34 A
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Pd - Power Dissipation	63 W
Vgs th - Gate-Source Threshold Voltage	2 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Technology	Si
Vgs - Gate-Source Voltage	25 V
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	78 mOhms
Qg - Gate Charge	57 nC
Channel Mode	Enhancement
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	34 A
Transistor Polarity	N-Channel
Number of Channels	1 Channel