MOSFET N-channel 1500 V 2.5 A PowerMESH
Products specifications
Packaging | Tube |
Configuration | Single |
Vgs - Gate-Source Voltage | 10 V |
Vds - Drain-Source Breakdown Voltage | 1.5 kV |
Pd - Power Dissipation | 63 W |
Qg - Gate Charge | 29.3 nC |
Technology | Si |
Id - Continuous Drain Current | 2.5 A |
Rds On - Drain-Source Resistance | 9 Ohms |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Tradename | PowerMESH |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |