STFW2N105K5

R 1.00

MOSFET N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in TO-3PF package

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MOSFET N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in TO-3PF package

Products specifications

Configuration	Single
Id - Continuous Drain Current	2 A
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	6 Ohms
Vgs th - Gate-Source Threshold Voltage	3 V
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	1.05 kV
Mounting Style	Through Hole
Tradename	SuperMESH
Qg - Gate Charge	10 nC
Number of Channels	1 Channel
Pd - Power Dissipation	30 W
Technology	Si
Vgs - Gate-Source Voltage	30 V

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Products specifications

Configuration	Single
Id - Continuous Drain Current	2 A
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	6 Ohms
Vgs th - Gate-Source Threshold Voltage	3 V
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	1.05 kV
Mounting Style	Through Hole
Tradename	SuperMESH
Qg - Gate Charge	10 nC
Number of Channels	1 Channel
Pd - Power Dissipation	30 W
Technology	Si
Vgs - Gate-Source Voltage	30 V