STFW24N60M2

R 1.00

MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-3PF package

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MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-3PF package

Products specifications

Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	18 A
Technology	Si
Qg - Gate Charge	29 nC
Packaging	Tube
Vgs - Gate-Source Voltage	25 V
Vgs th - Gate-Source Threshold Voltage	3 V
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	190 mOhms
Mounting Style	Through Hole
Tradename	MDmesh
Number of Channels	1 Channel
Configuration	Single
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Pd - Power Dissipation	48 W

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Products specifications

Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	18 A
Technology	Si
Qg - Gate Charge	29 nC
Packaging	Tube
Vgs - Gate-Source Voltage	25 V
Vgs th - Gate-Source Threshold Voltage	3 V
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	190 mOhms
Mounting Style	Through Hole
Tradename	MDmesh
Number of Channels	1 Channel
Configuration	Single
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Pd - Power Dissipation	48 W