STFW12N120K5

R 1.00

MOSFET N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-3PF packge

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MOSFET N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-3PF packge

Products specifications

Vds - Drain-Source Breakdown Voltage	1.2 kV
Qg - Gate Charge	44.2 nC
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	63 W
Technology	Si
Mounting Style	Through Hole
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	30 V
Tradename	MDmesh
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	12 A
Configuration	Single
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	620 mOhms
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Vds - Drain-Source Breakdown Voltage	1.2 kV
Qg - Gate Charge	44.2 nC
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	63 W
Technology	Si
Mounting Style	Through Hole
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	30 V
Tradename	MDmesh
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	12 A
Configuration	Single
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	620 mOhms
Transistor Polarity	N-Channel
Number of Channels	1 Channel