STFU9N65M2

R 1.00

MOSFET N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220FP ultra narrow leads package

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MOSFET N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220FP ultra narrow leads package

Products specifications

Configuration	Single
Vgs th - Gate-Source Threshold Voltage	2 V
Rds On - Drain-Source Resistance	790 mOhms
Vgs - Gate-Source Voltage	25 V
Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	5 A
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	20 W
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Qg - Gate Charge	10 nC
Technology	Si
Mounting Style	Through Hole

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Products specifications

Configuration	Single
Vgs th - Gate-Source Threshold Voltage	2 V
Rds On - Drain-Source Resistance	790 mOhms
Vgs - Gate-Source Voltage	25 V
Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	5 A
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	20 W
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Qg - Gate Charge	10 nC
Technology	Si
Mounting Style	Through Hole