MOSFET N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOSFET in TO-220FP ultra narrow leads package
Products specifications
Qg - Gate Charge | 33.3 nC |
Id - Continuous Drain Current | 12 A |
Vgs - Gate-Source Voltage | 25 V |
Vds - Drain-Source Breakdown Voltage | 650 V |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Pd - Power Dissipation | 30 W |
Transistor Polarity | N-Channel |
Tradename | MDmesh |
Technology | Si |
Rds On - Drain-Source Resistance | 380 mOhms |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Mounting Style | Through Hole |