Mounting Style | Through Hole |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 370 mOhms |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 800 V |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Id - Continuous Drain Current | 12 A |
Vgs - Gate-Source Voltage | 30 V |
Minimum Operating Temperature | - 55 C |
Qg - Gate Charge | 29 nC |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Pd - Power Dissipation | 35 W |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |