STFU13N65M2

R 1.00

MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in TO-220FP ultra narrow leads package

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MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in TO-220FP ultra narrow leads package

Products specifications

Technology	Si
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	650 V
Rds On - Drain-Source Resistance	430 mOhms
Tradename	MDmesh
Configuration	Single
Number of Channels	1 Channel
Id - Continuous Drain Current	10 A
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	25 V
Mounting Style	Through Hole
Qg - Gate Charge	17 nC
Pd - Power Dissipation	25 W
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C

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Products specifications

Technology	Si
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	650 V
Rds On - Drain-Source Resistance	430 mOhms
Tradename	MDmesh
Configuration	Single
Number of Channels	1 Channel
Id - Continuous Drain Current	10 A
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	25 V
Mounting Style	Through Hole
Qg - Gate Charge	17 nC
Pd - Power Dissipation	25 W
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C