STFU10NK60Z

R 1.00

MOSFET N-channel 600 V, 0.68 Ohm typ., 10 A SuperMESH Power MOSFET in TO-220FP ultra narrow leads package

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MOSFET N-channel 600 V, 0.68 Ohm typ., 10 A SuperMESH Power MOSFET in TO-220FP ultra narrow leads package

Products specifications

Vgs - Gate-Source Voltage	30 V
Maximum Operating Temperature	+ 150 C
Tradename	SuperMESH
Rds On - Drain-Source Resistance	680 mOhms
Vds - Drain-Source Breakdown Voltage	600 V
Channel Mode	Enhancement
Technology	Si
Vgs th - Gate-Source Threshold Voltage	3 V
Pd - Power Dissipation	35 W
Minimum Operating Temperature	- 55 C
Configuration	Single
Id - Continuous Drain Current	10 A
Qg - Gate Charge	48 nC
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Mounting Style	Through Hole

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Products specifications

Vgs - Gate-Source Voltage	30 V
Maximum Operating Temperature	+ 150 C
Tradename	SuperMESH
Rds On - Drain-Source Resistance	680 mOhms
Vds - Drain-Source Breakdown Voltage	600 V
Channel Mode	Enhancement
Technology	Si
Vgs th - Gate-Source Threshold Voltage	3 V
Pd - Power Dissipation	35 W
Minimum Operating Temperature	- 55 C
Configuration	Single
Id - Continuous Drain Current	10 A
Qg - Gate Charge	48 nC
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Mounting Style	Through Hole