STFU10N80K5

R 1.00

MOSFET N-channel 800 V, 0.470 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP ultra narrow leads package

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MOSFET N-channel 800 V, 0.470 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP ultra narrow leads package

Products specifications

Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Technology	Si
Vgs th - Gate-Source Threshold Voltage	3 V
Configuration	Single
Pd - Power Dissipation	30 W
Mounting Style	Through Hole
Tradename	MDmesh
Vds - Drain-Source Breakdown Voltage	800 V
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	470 mOhms
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	30 V
Id - Continuous Drain Current	9 A
Qg - Gate Charge	22 nC

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Products specifications

Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Technology	Si
Vgs th - Gate-Source Threshold Voltage	3 V
Configuration	Single
Pd - Power Dissipation	30 W
Mounting Style	Through Hole
Tradename	MDmesh
Vds - Drain-Source Breakdown Voltage	800 V
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	470 mOhms
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	30 V
Id - Continuous Drain Current	9 A
Qg - Gate Charge	22 nC