MOSFET N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220FP wide crepage package
Products specifications
Configuration | Single |
Tradename | MDmesh |
Pd - Power Dissipation | 40 W |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 600 V |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 25 V |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 78 mOhms |
Qg - Gate Charge | 57 nC |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Id - Continuous Drain Current | 34 A |
Technology | Si |
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |