STFH24N60M2

R 1.00

MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package

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MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package

Products specifications

Pd - Power Dissipation	30 W
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	168 mOhms
Vgs th - Gate-Source Threshold Voltage	2 V
Tradename	MDmesh
Qg - Gate Charge	29 nC
Vds - Drain-Source Breakdown Voltage	600 V
Packaging	Tube
Id - Continuous Drain Current	18 A
Mounting Style	Through Hole
Technology	Si

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Products specifications

Pd - Power Dissipation	30 W
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	168 mOhms
Vgs th - Gate-Source Threshold Voltage	2 V
Tradename	MDmesh
Qg - Gate Charge	29 nC
Vds - Drain-Source Breakdown Voltage	600 V
Packaging	Tube
Id - Continuous Drain Current	18 A
Mounting Style	Through Hole
Technology	Si