STFH18N60M2

R 1.00

MOSFET N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package

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MOSFET N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package

Products specifications

Configuration	Single
Pd - Power Dissipation	25 W
Rds On - Drain-Source Resistance	255 mOhms
Vgs th - Gate-Source Threshold Voltage	2 V
Packaging	Tube
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	13 A
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	25 V
Channel Mode	Enhancement
Number of Channels	1 Channel
Qg - Gate Charge	21.5 nC
Tradename	MDmesh
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si

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Products specifications

Configuration	Single
Pd - Power Dissipation	25 W
Rds On - Drain-Source Resistance	255 mOhms
Vgs th - Gate-Source Threshold Voltage	2 V
Packaging	Tube
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	13 A
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	25 V
Channel Mode	Enhancement
Number of Channels	1 Channel
Qg - Gate Charge	21.5 nC
Tradename	MDmesh
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si