MOSFET PTD HIGH VOLTAGE
Lead Time: 112 Days
Products specifications
Id - Continuous Drain Current | 11 A |
Transistor Polarity | N-Channel |
Tradename | MDmesh |
Vgs - Gate-Source Voltage | 25 V |
Qg - Gate Charge | 17 nC |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Pd - Power Dissipation | 25 W |
Packaging | Tube |
Mounting Style | Through Hole |
Vds - Drain-Source Breakdown Voltage | 600 V |
Rds On - Drain-Source Resistance | 350 mOhms |
Technology | Si |