MOSFET N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
Products specifications
Qg - Gate Charge | 13.5 nC |
Tradename | MDmesh |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 600 V |
Mounting Style | Through Hole |
Id - Continuous Drain Current | 7.5 A |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Rds On - Drain-Source Resistance | 550 mOhms |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 25 W |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 25 V |
Packaging | Tube |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |