STF9HN65M2

R 1.00

MOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220FP package

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MOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220FP package

Products specifications

Number of Channels	1 Channel
Channel Mode	Enhancement
Id - Continuous Drain Current	5.5 A
Pd - Power Dissipation	20 W
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	820 mOhms
Maximum Operating Temperature	+ 150 C
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	25 V
Vds - Drain-Source Breakdown Voltage	600 V
Qg - Gate Charge	11.5 nC
Configuration	Single
Tradename	MDmesh
Packaging	Tube
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	4 V
Technology	Si

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Products specifications

Number of Channels	1 Channel
Channel Mode	Enhancement
Id - Continuous Drain Current	5.5 A
Pd - Power Dissipation	20 W
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	820 mOhms
Maximum Operating Temperature	+ 150 C
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	25 V
Vds - Drain-Source Breakdown Voltage	600 V
Qg - Gate Charge	11.5 nC
Configuration	Single
Tradename	MDmesh
Packaging	Tube
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	4 V
Technology	Si