MOSFET N-Ch 600 V 4.7 A MDmesh 2nd Gen
Products specifications
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 20 W |
Configuration | Single |
Packaging | Tube |
Rds On - Drain-Source Resistance | 900 mOhms |
Vds - Drain-Source Breakdown Voltage | 600 V |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 12 nC |
Tradename | MDmesh |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 5 A |
Maximum Operating Temperature | + 150 C |
Mounting Style | Through Hole |
Technology | Si |
Vgs - Gate-Source Voltage | 25 V |